Search results for "SEMICONDUCTOR MICROCAVITIES"
showing 2 items of 2 documents
Room temperature polariton luminescence from a GaN∕AlGaN quantum well microcavity
2006
The authors report on the demonstration of strong light-matter coupling at room temperature using a crack-free UV microcavity containing GaN/AlGaN quantum wells (QWs). Lattice-matched AlInN/AlGaN distributed Bragg reflectors (DBRs) with a maximum peak reflectivity of 99.5% and SiO2/Si3N4 DBRs were used to form high finesse hybrid microcavities. State-of-the-art GaN/Al0.2Ga0.8N QWs emitting at 3.62 eV with a linewidth of 45 meV at 300 K were inserted in these structures. For a 3 lambda/2 microcavity containing six QWs, the interaction between cavity photons and QW excitons is sufficiently large to reach the strong coupling regime. A polariton luminescence is observed with a vacuum field Rabi…
Room-temperature polariton luminescence from a bulk GaN microcavity
2006
We report strong exciton-photon coupling at room temperature in a hybrid high quality bulk 3 lambda/2 GaN cavity with a bottom lattice-matched AlInN/AlGaN distributed Bragg reflector through angle-resolved polarized photoluminescence (PL). Coupling of the optically active free excitons (X-A, X-B, and X-C) to the cavity mode is demonstrated, with their contribution to the PL spectra varying with polarization. Under TE polarization, exciton oscillator strengths for X-A and X-B are about one order of magnitude larger than in bulk GaAs. Photoluminescence exhibits a strong bottleneck effect despite its thermal lineshape.